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Temel Mühendislik Ana Bilim Dalı

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Browsing Temel Mühendislik Ana Bilim Dalı by Author "Işık, M."

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    Temperature and Excitation Intensity Tuned Photoluminescence In Ga0.75In0.25Se Crystals
    (Elsevier Science BV, 2013) Işık, M.; Güler, I.; Gasanlyc, N. M.; 101531
    Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved.