Fizik Bilim Dalı
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Article Citation - WoS: 4Citation - Scopus: 4Growth and Characterization of Nabi(Mo0.5w0.5o4)2 Single Crystal: a Promising Material for Optoelectronic Applications(Elsevier Sci Ltd, 2023) Isik, M.; Guler, I.; Gasanly, N. M.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya ÜniversitesiThe structural and optical characteristics of NaBi(Mo0.5W0.5O4)2 single crystals grown by Czochralski method were investigated. X-ray diffraction (XRD) pattern exhibited four well-defined peaks related to tetragonal crystalline structure with a space group I41/a. Raman and infrared transmittance spectra were recorded to investigate vibrational properties of the compound. Room temperature transmission spectrum was measured to reveal band gap energy of the crystal. The derivative spectral and absorption coefficient analyses resulted in direct band gap energy of 3.19 and 3.18 eV, respectively. Urbach energy of the crystal was also determined as 0.17 eV from photon energy dependency of absorption coefficient. The structural and optical parameters ob-tained for NaBi(Mo0.5W0.5O4)2 were compared with the parameters of the NaBi(XO4)2 (X: Mo,W) compounds to understand the effect of the composition on the studied properties. The reported characteristics of NaBi (Mo0.5W0.5O4)2 point out that the compound has significant potential to be used in optoelectronic devices.Article Citation - WoS: 3The Important Role of N(2) Ion in the Phase-Transition Mechanism of [N(ch3)4]2znbr4(Ieee-inst Electrical Electronics Engineers inc, 2020) Kiraci, Ali; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya ÜniversitesiThe chemical shift of the N(2)(CH3)(4) ion, which has been found to exhibit the similar anomalous behavior of the monoclinic angle $\Delta \beta $ , was related to the order parameter to evaluate the temperature dependence of the linewidth (damping constant) for N-14 nuclear magnetic resonance spectrum of this crystal in terms of the dynamic Ising models, namely the pseudospin-phonon-coupled (PS) and the energy fluctuation (EF) models. The results from both PS and EF models were successful to explain the abnormal behavior of the linewidth in the vicinity of the phase-transition temperature of ${T}_{C}= {287.6}$ K, when compared with the observed linewidth of the transverse acoustic soft mode in this crystal. As an extension of this work, the N-14 relaxation time and the values of the activation free energy were calculated as a function of temperature. The results indicate that the ferroelastic-paraelastic phase transition in this compound is of the order-disorder type.Article Citation - WoS: 3Citation - Scopus: 3A Phenomenological Study on Ferroelastic Kh3(Seo3)2 and Kd3(Seo3)2(Pergamon-elsevier Science Ltd, 2021) Kiraci, A.; 42475; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya ÜniversitesiThe anomalous behavior of the Brillouin frequency shift omega of the soft acoustic mode for KH3(SeO3)(2) and KD3(SeO3)(2), and also the volume thermal expansion proportional to(V) and the specific heat C of KH3(SeO3)(2) have been analyzed for various temperature intervals close to the phase transition temperatures TC at around 211 K and 302 K, respectively. Our extracted values of the critical exponent from C and proportional to(V) of KH3(SeO3)(2) within the temperature intervals of vertical bar T -T-C vertical bar < 7 K are nearly zero, while the critical exponent extracted from the Brillouin frequency shift data of both KH3(SeO3)(2) and KD3(SeO3)(2) within the same temperature interval of vertical bar T -T-C vertical bar < 7 K decrease very rapidly toward to zero as the phase transition temperatures are approached. Our results indicate that the critical behavior of omega, proportional to(V) and C of both KH3(SeO3)(2) and KD3(SeO3)(2) can be described with the same critical exponent within the temperature interval of vertical bar T -T-C vertical bar < 2 K.Article Citation - WoS: 4Citation - Scopus: 4Temperature-Dependent Absorption Edge and Photoconductivity of Tl2in2s3se Layered Single Crystals(Elsevier Science Sa, 2013) Ambrico, M.; Ligonzo, T.; Gasanly, N. M.; Guler, I.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya ÜniversitesiTemperature variation of indirect band gap of Tl2In2S3Se layered single crystals were obtained by means of absorption and photoconductivity measurements. The temperature coefficient of -7.1 x 10(-4) eV/K from absorption measurements in the temperature range of 10-300 K in the wavelength range of 520-1100 nm and -5.0 x 10(-4) eV/K from PC measurements in the temperature range of 132-291 K in the wavelength range of 443-620 nm upon supplying voltage V = 80 V were obtained. From the analysis of dark conductivity measurements in the temperature range of 150-300 K, conductivity activation energy was obtained as 0.51 eV above 242 K. The degree of the disorder, the density of localized states near Fermi level, the average hopping distance and average hopping energy of Tl2In2S3Se crystals were found as, 1.9 x 10(5) K, Nf = 4 x 10(20) cm(-3)eV(-1), 29.1 angstrom and 24.2 meV in the temperature range of 171-237 K, respectively. Activation energy of hopping conductivity at T = 171 K was obtained as 41.3 meV and the concentration of trapping states was found as 1.6 x 10(19) cm(-3). (C) 2012 Elsevier B.V. All rights reserved.Article Citation - WoS: 2Citation - Scopus: 2Thermoluminescence Characterization of (Ga2se3)0.25 - (Ga2s3)0.75 Single Crystal Compounds(Elsevier Sci Ltd, 2020) Guler, I; Gasanly, N. M.; Isik, M.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya ÜniversitesiGa2Se3 and Ga2S3 compounds take attention due to their potential applications in photovoltaics. Defects and impurities may affect the quality of optoelectronic devices. Therefore, it is worthwhile to determine the parameters (activation energy, order of kinetics, frequency factor) of traps associated with the defects and/or impurities. The aim of the present paper is to investigate the trapping parameters of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal which is one of the member of (Ga2Se3)(x) - (Ga2S3)(1-x) mixed crystals. For this purpose, thermoluminescence (TL) experiments were performed on (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystals in the 10-300 K region. TL spectra were also recorded using various heating rates in between 0.2 and 1.0 K/s and stopping temperatures from 30 to 60 K to get the detailed information about the characteristics of the trapping parameters. TL glow curves exhibited the overlapped peaks. The stopping temperature experimental data indicated that traps present quasi-continuous distribution within the band gap. Initial rise method analyses were applied to get the activation energies of quasi-continuously distributed revealed traps. Thermal activation energies of distributed traps were found as increasing from 108 to 246 meV as stopping temperature was increased from 30 to 60 K. The structural characteristics (lattice constants and atomic compositions of constituent elements) of used compound were also reported in the present study.
