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Fizik Bilim Dalı Yayın Koleksiyonu

Permanent URI for this collectionhttps://hdl.handle.net/20.500.12416/4363

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Browsing Fizik Bilim Dalı Yayın Koleksiyonu by Subject "Defects"

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    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds
    (Elsevier Sci Ltd, 2020) Isik, M.; Güler, İpek; Guler, I; Gasanly, N. M.; 101531; Ortak Dersler Bölümü
    Ga2Se3 and Ga2S3 compounds take attention due to their potential applications in photovoltaics. Defects and impurities may affect the quality of optoelectronic devices. Therefore, it is worthwhile to determine the parameters (activation energy, order of kinetics, frequency factor) of traps associated with the defects and/or impurities. The aim of the present paper is to investigate the trapping parameters of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal which is one of the member of (Ga2Se3)(x) - (Ga2S3)(1-x) mixed crystals. For this purpose, thermoluminescence (TL) experiments were performed on (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystals in the 10-300 K region. TL spectra were also recorded using various heating rates in between 0.2 and 1.0 K/s and stopping temperatures from 30 to 60 K to get the detailed information about the characteristics of the trapping parameters. TL glow curves exhibited the overlapped peaks. The stopping temperature experimental data indicated that traps present quasi-continuous distribution within the band gap. Initial rise method analyses were applied to get the activation energies of quasi-continuously distributed revealed traps. Thermal activation energies of distributed traps were found as increasing from 108 to 246 meV as stopping temperature was increased from 30 to 60 K. The structural characteristics (lattice constants and atomic compositions of constituent elements) of used compound were also reported in the present study.
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    Article
    Thermoluminescence in gallium sesquisulfide single crystals: usual and unusual heating rate dependencies
    (2018) Guler, I.; Isik, M.; Gasanova, L.; Mahammadov, A.; Gasanly, N.
    Thermoluminescence (TL) experiments were conducted for Ga2S3 crystals to obtain information about trapping parameters. TL measurements were performed from 10 to 300 K with varying heating rates in the range of 0.2–0.8 K/s. Two TL glow peaks centered at 44 K (peak A) and 91 K (peak B) were observed at heating rate of β = 0.5 K/s. For peak A, TL intensity decreased whereas that for peak B increased with elevating the heating rates that means anomalous heating rate occurred for peak B. TL glow curves were analyzed using initial rise method to find activation energies of traps. Distribution of trap centers was investigated using Tmax − Tstop method. Quasi-continuous distributions with increasing activation energies from 40 to 135 meV and 193 to 460 meV were attributed to trap centers A and B, respectively.