Fizik Bilim Dalı Yayın Koleksiyonu

Permanent URI for this collectionhttps://hdl.handle.net/20.500.12416/4363

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Now showing 1 - 9 of 9

Citation - WoS: 3
Citation - Scopus: 3
A phenomenological study on ferroelastic KH3(SeO3)(2) and KD3(SeO3)(2)
(Pergamon-elsevier Science Ltd, 2021) Kiraci, A.; Kiracı, Ali; 42475; Ortak Dersler Bölümü
The anomalous behavior of the Brillouin frequency shift omega of the soft acoustic mode for KH3(SeO3)(2) and KD3(SeO3)(2), and also the volume thermal expansion proportional to(V) and the specific heat C of KH3(SeO3)(2) have been analyzed for various temperature intervals close to the phase transition temperatures TC at around 211 K and 302 K, respectively. Our extracted values of the critical exponent from C and proportional to(V) of KH3(SeO3)(2) within the temperature intervals of vertical bar T -T-C vertical bar < 7 K are nearly zero, while the critical exponent extracted from the Brillouin frequency shift data of both KH3(SeO3)(2) and KD3(SeO3)(2) within the same temperature interval of vertical bar T -T-C vertical bar < 7 K decrease very rapidly toward to zero as the phase transition temperatures are approached. Our results indicate that the critical behavior of omega, proportional to(V) and C of both KH3(SeO3)(2) and KD3(SeO3)(2) can be described with the same critical exponent within the temperature interval of vertical bar T -T-C vertical bar < 2 K.
Citation - WoS: 3
Citation - Scopus: 2
Characterization of linear and nonlinear optical properties of NaBi(WO4)2 crystal by spectroscopic ellipsometry
(Elsevier, 2024) Isik, M.; Güler, İpek; Guler, I.; Gasanly, N. M.; 101531; Ortak Dersler Bölümü
NaBi(WO4)2 compound has been a material of considerable attention in optoelectronic applications. The present research, in which we examined the linear and nonlinear optical properties of NaBi(WO4)2 crystal using the spectroscopic ellipsometry method, elucidates the optical behavior of the crystal in detail. Our work provides a sensitive approach to determine the spectral characteristic of the crystal. The spectral dependence of various optical parameters such as refractive index, extinction coefficient, dielectric function and absorption coefficient was reported in the range of 1.2-5.0 eV. Optical values such as bandgap energy, critical point energy, single oscillator parameters were obtained as a result of the analyses. In addition to linear optical properties, we also investigated the nonlinear optical behavior of NaBi(WO4)2 and shed new light on the potential applications of the crystal. Absorbance and photoluminescence spectra of the crystal were also reported to characterize optical, electronic and emission behavior of the compound. Our findings may form the basis for a number of technological applications such as optoelectronic devices, frequency conversion, and optical sensors. This research contributes to a better understanding of the optical properties of NaBi(WO4)2 crystal, highlighting the material's role in future optical and electronic technologies.
Citation - WoS: 4
Citation - Scopus: 4
Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications
(Elsevier Sci Ltd, 2023) Isik, M.; Guler, I.; Gasanly, N. M.; 101531
The structural and optical characteristics of NaBi(Mo0.5W0.5O4)2 single crystals grown by Czochralski method were investigated. X-ray diffraction (XRD) pattern exhibited four well-defined peaks related to tetragonal crystalline structure with a space group I41/a. Raman and infrared transmittance spectra were recorded to investigate vibrational properties of the compound. Room temperature transmission spectrum was measured to reveal band gap energy of the crystal. The derivative spectral and absorption coefficient analyses resulted in direct band gap energy of 3.19 and 3.18 eV, respectively. Urbach energy of the crystal was also determined as 0.17 eV from photon energy dependency of absorption coefficient. The structural and optical parameters ob-tained for NaBi(Mo0.5W0.5O4)2 were compared with the parameters of the NaBi(XO4)2 (X: Mo,W) compounds to understand the effect of the composition on the studied properties. The reported characteristics of NaBi (Mo0.5W0.5O4)2 point out that the compound has significant potential to be used in optoelectronic devices.
Citation - WoS: 4
Citation - Scopus: 5
Growth and temperature tuned band gap characteristics of NaBi(MoO4)2 single crystal
(Iop Publishing Ltd, 2023) Isik, M.; Guler, I; Gasanly, N. M.; 101531
Structural and optical properties of double sodium-bismuth molybdate NaBi(MoO4)(2) semiconductor compound was investigated by x-ray diffraction, Raman and transmission experiments. From the x-ray diffraction experiments, the crystal that has tetragonal structure was obtained. Vibrational modes of the crystal were found from the Raman experiments. Transmission experiments were performed in the temperature range of 10-300 K. Derivative spectroscopy analysis and absorption spectrum analysis were performed to get information about the change in band gap energy of the crystal with temperature. It was observed that the band gap energies of the crystal at different temperatures obtained from these techniques are well consisted with each other. By the help of absorption spectrum which was obtained from transmission measurements performed at varying temperatures, absolute zero value of the band gap and average phonon energy as 3.03 +/- 0.02 eV and Eph = 24 +/- 0.2 meV, respectively. Moreover, based on absorption spectrum analysis the Urbach energy of the crystal was obtained as 0.10 eV.
Citation - WoS: 9
Optical analysis of TlInS2xSe2(1-x) mixed crystals
(Amer inst Physics, 2014) Güler, İpek; Guler, I.; 101531; Ortak Dersler Bölümü
The ellipsometry measurements were carried out on TlInS2xSe2(1-x) mixed crystals in the spectral range of 1.5-6.0 eV at room temperature. The refractive index, extinction coefficient, real and imaginary parts of dielectric function were found as a result of ellipsometric measurements. The energies of interband transitions (critical point energies) of the TlInS2xSe2(1-x) mixed crystals were obtained by means of the second derivative of the real and imaginary parts of dielectric function. The variation of the critical point energies with the isomorphic anion substitution that is sulfur for selenium atoms was established. (C) 2014 AIP Publishing LLC.
Citation - WoS: 3
Citation - Scopus: 3
Optical characterization of (TlInS2)0.5(TlInSe2)0.5 crystal by ellipsometry: linear and optical constants for optoelectronic devices
(Springer, 2023) Guler, I.; Isik, M.; Gasanly, N.; 101531
TlInSSe [(TlInS2)(0.5)(TlInSe2)(0.5)] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25-6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals.
Citation - WoS: 1
Citation - Scopus: 2
Spectroscopic ellipsometry studies of optical properties of TlIn(S0.25Se0.75)2 crystal
(Springer Heidelberg, 2023) Guler, I.; Isik, M.; Gasanly, N.; 101531
The optical properties of TlIn(S0.25Se0.75)(2) crystals were studied by ellipsometry measurements. X-ray diffraction pattern presented well-defined peaks associated with monoclinic structure. Energy dependent graphs of various linear optical parameters of the crystal were presented in the 1.25-4.50 eV range. The band gap and Urbach energies of the compound were found as 1.96 and 0.68 eV, respectively, from the analyses of the absorption coefficient. Refractive index spectrum was analyzed considering the single-effective-oscillator model to get oscillator and dispersion energies, zero and high frequency dielectric constants, plasma frequency. Moreover, the nonlinear refractive index, first-order and third-order nonlinear susceptibilities of TlIn(S0.25Se0.75)(2) crystal were revealed in the present paper.
Citation - WoS: 1
Citation - Scopus: 3
Structural and optical properties of (TlInS2)0.75(TlInSe2)0.25 thin films deposited by thermal evaporation
(Springer, 2023) Guler, I.; Isik, M.; Gasanly, N.; 101531
Layered semiconductor materials have become a serious research topic in recent years, thanks to their effective optical properties. In this article, the thin-film structure of Tl2In2S3Se [(TlInS2)(0.75)(TlInSe2)(0.25)] material with layered structure was grown by thermal evaporation method. The structural, morphological, and optical properties of the deposited thin films were examined. X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS) and atomic force microscopy (AFM) techniques were used to get information about structural and morphological properties of the thin films. XRD pattern presented well-defined peaks associated with monoclinic crystalline structure. The crystallite size, dislocation density, and lattice strain of the films were also obtained from the analyses of XRD pattern. EDS analysis showed that atomic compositional ratios of the Tl, In, S, and Se elements are consistent with chemical formula of Tl2In2S3Se. The optical characterization of thin film was performed using transmission and Raman spectroscopy techniques. Raman spectrum offered information about the vibrational modes of the thin film. The analyses of the transmission spectrum presented the indirect and direct band gap energies of the Tl2In2S3Se thin film as 2.23 and 2.52 eV, respectively. The further analyses on the absorption coefficient resulted in Urbach energy of 0.58 eV.
Citation - WoS: 2
Citation - Scopus: 2
Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds
(Elsevier Sci Ltd, 2020) Isik, M.; Güler, İpek; Guler, I; Gasanly, N. M.; 101531; Ortak Dersler Bölümü
Ga2Se3 and Ga2S3 compounds take attention due to their potential applications in photovoltaics. Defects and impurities may affect the quality of optoelectronic devices. Therefore, it is worthwhile to determine the parameters (activation energy, order of kinetics, frequency factor) of traps associated with the defects and/or impurities. The aim of the present paper is to investigate the trapping parameters of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal which is one of the member of (Ga2Se3)(x) - (Ga2S3)(1-x) mixed crystals. For this purpose, thermoluminescence (TL) experiments were performed on (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystals in the 10-300 K region. TL spectra were also recorded using various heating rates in between 0.2 and 1.0 K/s and stopping temperatures from 30 to 60 K to get the detailed information about the characteristics of the trapping parameters. TL glow curves exhibited the overlapped peaks. The stopping temperature experimental data indicated that traps present quasi-continuous distribution within the band gap. Initial rise method analyses were applied to get the activation energies of quasi-continuously distributed revealed traps. Thermal activation energies of distributed traps were found as increasing from 108 to 246 meV as stopping temperature was increased from 30 to 60 K. The structural characteristics (lattice constants and atomic compositions of constituent elements) of used compound were also reported in the present study.

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