Fizik Bilim Dalı Yayın Koleksiyonu

Permanent URI for this collectionhttps://hdl.handle.net/20.500.12416/4363

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Now showing 1 - 3 of 3

Citation - WoS: 8
Citation - Scopus: 8
Analysis of the specific heat and the free energy of [N(CH3)(4)](2)ZnBr4 close to the ferro-paraelastic phase transition
(Taylor & Francis Ltd, 2019) Kiraci, A.; Kiracı, Ali; 42475; Ortak Dersler Bölümü
A power-law formula deduced from the Ising model was used to analyze the temperature dependence of the specific heat and the Gibbs free energy of [N(CH3)(4)](2)ZnBr4 compound in the vicinity of the phase transition temperature of T-C = 287.2 K. Obtained values of the critical exponents from the Gibbs free energy were consistent with that predicted from 2-d potts model ( = 0.3), while obtained values of from the specific heat in both ferroelastic and paraelastic phases were consistent with that predicted from the mean field theory ( = 0) in the vicinity of the phase transition temperature. This is an indication of that [N(CH3)(4)](2)ZnBr4 compound undergoes a second order type phase transition. Also, the enthalpy () and the entropy () of this crystal were calculated in terms of the extracted values of the critical exponent in both ferroelastic and paraelastic phases.
Citation - WoS: 3
Citation - Scopus: 3
Characterization of N Rich-Silicon Nitride Thin Films Deposited by PECVD
(Electrochemical Soc inc, 2023) Guler, I.; Güler, İpek; 101531; Ortak Dersler Bölümü
Silicon nitride thin films are very important for their possible use in semiconductor industry and electronic applications. Changing the deposition parameters, silicon nitrides which have many varying optical properties can be produced. In this work, silicon nitride (SiNx) thin films were deposited on silicon substrates using Plasma enhanced chemical vapor deposition (PECVD) technique. The silane (SiH4) and ammonia (NH3) were used as reactant gases. Using these reactant gases, nitrogen (N) rich SiNx films were obtained. In order to get information about absorption and bond types in the films, films were analyzed by the help of Fourier transform infrared spectroscopy (FTIR) was performed. The refractive index, extinction coefficient and band gap energy of the films were changed from 1.86, 0 and 5.38 eV to 2.05, 0.0048 and 4.26 eV, respectively. Using the refractive index, composition of the films were estimated that is [N]/[Si] ratio of the films varied from 1.38 to 1.62. For possible applications of the SiNx films, learning the origin of the light-emission of the films is very important so the photoluminescence (PL) measurements were also used to see the luminescent of the SiNx films which is related to the electronic transitions between the K-center level and the conduction band tail states.
Citation - WoS: 4
Citation - Scopus: 6
Structural and optical properties of thermally annealed thallium indium disulfide thin films
(Elsevier Science Sa, 2020) Guler, I; Güler, İpek; Gasanly, N.; 101531; Ortak Dersler Bölümü
Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature transmittance spectrum, the band gap energies of the films were identified. The decrease in band gap energies of the films with the annealing temperature up to 300 degrees C was observed due to increase in crystallite size and decrease in lattice strain. From Raman measurements, it was observed that the Raman shifts of the films were well correlated with those of TlInS2 bulk crystal.

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