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Compositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystals

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dc.contributor.authorGüler, I.
dc.contributor.authorGasanly, N. M.
dc.contributor.authorKorkmaz, F.
dc.date.accessioned2020-05-03T20:53:48Z
dc.date.available2020-05-03T20:53:48Z
dc.date.issued2014
dc.departmentÇankaya Üniversitesi, Mühendislik Fakültesi, Malzeme Bilimi ve Mühendisliği Bölümüen_US
dc.description.abstractThe Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.publishedMonth11
dc.identifier.citationGuler, I.; Gasanly, N. M., "Compositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystals", Applied Surface Science, 318, pp. 113-115, (2014).en_US
dc.identifier.doi10.1016/j.apsusc.2014.01.131
dc.identifier.endpage115en_US
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.startpage113en_US
dc.identifier.urihttp://hdl.handle.net/20.500.12416/3600
dc.identifier.volume318en_US
dc.language.isoenen_US
dc.publisherElsevier Scienceen_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectLayered Crystalsen_US
dc.subjectRaman Line Widthsen_US
dc.subjectCrystal Disorderen_US
dc.titleCompositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystalstr_TR
dc.titleCompositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication

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