Bilgilendirme: Sürüm Güncellemesi ve versiyon yükseltmesi nedeniyle, geçici süreyle zaman zaman kesintiler yaşanabilir ve veri içeriğinde değişkenlikler gözlemlenebilir. Göstereceğiniz anlayış için teşekkür ederiz.
 

Technological Advances and Challenges in Chemical Mechanical Polishing

No Thumbnail Available

Date

2020

Journal Title

Journal ISSN

Volume Title

Publisher

Open Access Color

OpenAIRE Downloads

OpenAIRE Views

Research Projects

Journal Issue

Abstract

It has been already several decades since chemical mechanical polishing (CMP) process has been deployed as a planarization technique for the fabrication of integrated circuit (IC) in the semiconductor industries. CMP is considered to be a wet polishing technique that has the capability to generate ultrafine surfaces for numerous materials using the combined effect of chemical and mechanical interactions. As CMP involves both mechanical and chemical actions, the process efficiency of CMP also varies with the parameters involved with mechanical and chemical aspects. This chapter presents an overview of CMP technology, working principles, its recent advancement status in terms of green slurry development, abrasives development, new polishing method, research trends and challenges.

Description

Keywords

Wafer, Surface, Planarization, Abrasives, Polishing

Turkish CoHE Thesis Center URL

Fields of Science

Citation

Nadimi Bavil Oliaei, Samad; Mukhtarkhanov, Muslim; Perveen, Asma. "Technological Advances and Challenges in Chemical Mechanical Polishing", in Advances in Abrasive Based Machining and Finishing Processes, Springer, pp. 235-253, 2020.

WoS Q

Scopus Q

Source

Advances in Abrasive Based Machining and Finishing Processes

Volume

Issue

Start Page

235

End Page

253
Page Views

192

checked on Nov 26, 2025

Downloads

1

checked on Nov 26, 2025

Google Scholar Logo
Google Scholar™

Sustainable Development Goals