Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications
| dc.authorid | Isik, Mehmet/0000-0003-2119-8266 | |
| dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
| dc.authorscopusid | 23766993100 | |
| dc.authorscopusid | 55445682700 | |
| dc.authorscopusid | 35580905900 | |
| dc.authorwosid | Isik, Mehmet/Kmy-5305-2024 | |
| dc.authorwosid | Gasanly, Nizami/Hre-1447-2023 | |
| dc.contributor.author | Isik, M. | |
| dc.contributor.author | Guler, I. | |
| dc.contributor.author | Gasanly, N. M. | |
| dc.contributor.authorID | 101531 | tr_TR |
| dc.date.accessioned | 2023-12-22T11:59:40Z | |
| dc.date.available | 2023-12-22T11:59:40Z | |
| dc.date.issued | 2023 | |
| dc.department | Çankaya University | en_US |
| dc.department-temp | [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkiye; [Guler, I.] Cankaya Univ, Phys Intercurricular Courses Dept, TR-06530 Ankara, Turkiye; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkiye | en_US |
| dc.description | Isik, Mehmet/0000-0003-2119-8266; Gasanly, Nizami/0000-0002-3199-6686 | en_US |
| dc.description.abstract | The structural and optical characteristics of NaBi(Mo0.5W0.5O4)2 single crystals grown by Czochralski method were investigated. X-ray diffraction (XRD) pattern exhibited four well-defined peaks related to tetragonal crystalline structure with a space group I41/a. Raman and infrared transmittance spectra were recorded to investigate vibrational properties of the compound. Room temperature transmission spectrum was measured to reveal band gap energy of the crystal. The derivative spectral and absorption coefficient analyses resulted in direct band gap energy of 3.19 and 3.18 eV, respectively. Urbach energy of the crystal was also determined as 0.17 eV from photon energy dependency of absorption coefficient. The structural and optical parameters ob-tained for NaBi(Mo0.5W0.5O4)2 were compared with the parameters of the NaBi(XO4)2 (X: Mo,W) compounds to understand the effect of the composition on the studied properties. The reported characteristics of NaBi (Mo0.5W0.5O4)2 point out that the compound has significant potential to be used in optoelectronic devices. | en_US |
| dc.description.publishedMonth | 3 | |
| dc.description.woscitationindex | Science Citation Index Expanded | |
| dc.identifier.citation | Işık,M.; Güler, I.; Gasanly, N.M. (2023). "Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications", Materials Science in Semiconductor Processing, Vol.156. | en_US |
| dc.identifier.doi | 10.1016/j.mssp.2022.107257 | |
| dc.identifier.issn | 1369-8001 | |
| dc.identifier.issn | 1873-4081 | |
| dc.identifier.scopus | 2-s2.0-85143730359 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.uri | https://doi.org/10.1016/j.mssp.2022.107257 | |
| dc.identifier.volume | 156 | en_US |
| dc.identifier.wos | WOS:000906648200001 | |
| dc.identifier.wosquality | Q2 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Sci Ltd | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.scopus.citedbyCount | 4 | |
| dc.subject | Nabi(Moo4)(2) | en_US |
| dc.subject | Nabi(Wo4)(2) | en_US |
| dc.subject | Optical Properties | en_US |
| dc.subject | Optoelectronic Applications | en_US |
| dc.title | Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications | tr_TR |
| dc.title | Growth and Characterization of Nabi(Mo0.5w0.5o4)2 Single Crystal: a Promising Material for Optoelectronic Applications | en_US |
| dc.type | Article | en_US |
| dc.wos.citedbyCount | 4 | |
| dspace.entity.type | Publication |
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