Guler, I.Gasanly, N. M.Ortak Dersler Bölümü2020-05-032020-05-032014Guler, I.; Gasanly, N. M., "Compositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystals", Applied Surface Science, 318, pp. 113-115, (2014).0169-43321873-5584https://doi.org/10.1016/j.apsusc.2014.01.131The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported. (C) 2014 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessLayered CrystalsRaman Line WidthsCrystal DisorderCompositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed CrystalsCompositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlins2xse2(1-X) Mixed CrystalsConference Object31811311510.1016/j.apsusc.2014.01.1312-s2.0-84908375006WOS:000344380500022Q1Q1