Işık, M.Güler, I.Gasanlyc, N. M.2020-04-092020-04-092013Isik, M.; Guler, I.; Gasanly, N. M. "Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals", Optical Materials, Vol. 35, No. 3, pp. 414-418, (2013)0925-34671873-1252https://hdl.handle.net/20.500.12416/3012Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSemiconductorsOptical PropertiesPhotoluminescenceDefect LevelsArticle35341441810.1016/j.optmat.2012.09.019