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Temel Mühendislik Ana Bilim Dalı

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Browsing Temel Mühendislik Ana Bilim Dalı by Journal "Optical Materials"

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    Article
    Study of vibrational modes in (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals by Raman and infrared reflection measurements
    (Elsevier, 2019) Güler, İpek; Güler, İpek; Gasanly, Nizami Mamed; 101531
    Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)(x) - (Ga2Se3)(1-x) crystals were established. One-mode behavior was displayed from indicated dependencies.
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    Article
    Temperature and Excitation Intensity Tuned Photoluminescence In Ga0.75In0.25Se Crystals
    (Elsevier Science BV, 2013) Işık, M.; Güler, I.; Gasanlyc, N. M.; 101531
    Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved.