Scopus İndeksli Yayınlar Koleksiyonu
Permanent URI for this collectionhttps://hdl.handle.net/20.500.12416/8651
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Article Citation - WoS: 5Citation - Scopus: 7Structural and Optical Properties of Thermally Annealed Thallium Indium Disulfide Thin Films(Elsevier Science Sa, 2020) Gasanly, N.; Guler, IStructural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature transmittance spectrum, the band gap energies of the films were identified. The decrease in band gap energies of the films with the annealing temperature up to 300 degrees C was observed due to increase in crystallite size and decrease in lattice strain. From Raman measurements, it was observed that the Raman shifts of the films were well correlated with those of TlInS2 bulk crystal.Article Citation - WoS: 6Citation - Scopus: 7Bombardment of Ni(100) Surface With Low-Energy Argons: Molecular Dynamics Simulations(Elsevier Science Sa, 2005) Güvenç, ZB; Hippler, R; Jackson, BResults of molecular dynamics simulations of the sputtering of Ni(100) by Ar atoms are reported. The solid is described by an embedded atom potential, and the interaction between the projectile and the metal atoms is modelled by a Morse-like function. Processes leading to Ni atom emissions from the lattice are analysed over the energy range of 70-80 eV In this energy range cluster (larger than three atoms) emission is not observed. The maximum penetration depth of Ar, the kinetic energy and angular distributions of the reflected Ar, and the sputtered Ni atoms are evaluated as functions of the impact energy and sputtering time. The computed sputtering yield is compared with the available theoretical and experimental data. (C) 2004 Elsevier B.V. All rights reserved.Article Citation - WoS: 9Citation - Scopus: 11Chemical Bonding Structure of Tio2 Thin Films Grown on N-Type Si(Elsevier Science Sa, 2011) Baleanu, Cristina-Mihaela; Nigmatullin, Raoul R.; Baleanu, Dumitru; Ozcelik, Suleyman; Cetin, S. SebnemTitanium dioxide thin films were obtained by RF magnetron sputtering system with different Ar and O atmospheres. Chemical bonding structures of the thin films were investigated using the Fourier transform infrared spectroscopy (FTIR) in the range of 400-7500 cm(-1) for as-deposited and conventionally thermal annealed films at different temperature in air. These structural characterizations of the films were carried out by describing the low-frequency fluctuations of the FTIR spectra using the noninvasive (i.e. error controllable) procedure of the optimal linear smoothing. This approach is based on the criterion of the minimal relative error in selection of the proper smoothing window. It allows the receiving an optimal separation of a possible trend from the high-frequency fluctuations, defined as a random sequence of the relative fluctuations possessing zero trends. Thus, the noise can be read and extra information about the structures was then obtained by comparing with the experimental results. In the film annealed at 900 degrees C, the rutile phase was the dominant crystalline phase as revealed by infrared spectroscopy. At the annealing temperatures lower than 900 degrees C, both the anatase and the rutile phases were coexisting. In addition, symmetric and asymmetric Si-O-Si vibrations modes were observed at around 1000 cm(-1) and 800 cm(-1), respectively. These peaks suggest that a thin SiO2 film was formed at the TiO2/Si interface during the growth and the annealing of the TiO2 films. It was also observed that the reactivity between TiO2 film and Si substrate is increased with the increasing annealing temperature. (C) 2011 Elsevier B.V. All rights reserved.