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Growth and Characterization of Nabi(Mo0.5w0.5o4)2 Single Crystal: a Promising Material for Optoelectronic Applications

dc.contributor.author Isik, M.
dc.contributor.author Guler, I.
dc.contributor.author Gasanly, N. M.
dc.contributor.authorID 101531 tr_TR
dc.contributor.other 09.01. Ortak Dersler Bölümü
dc.contributor.other 09. Rektörlük
dc.contributor.other 01. Çankaya Üniversitesi
dc.date.accessioned 2023-12-22T11:59:40Z
dc.date.accessioned 2025-09-18T12:48:41Z
dc.date.available 2023-12-22T11:59:40Z
dc.date.available 2025-09-18T12:48:41Z
dc.date.issued 2023
dc.description Isik, Mehmet/0000-0003-2119-8266; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract The structural and optical characteristics of NaBi(Mo0.5W0.5O4)2 single crystals grown by Czochralski method were investigated. X-ray diffraction (XRD) pattern exhibited four well-defined peaks related to tetragonal crystalline structure with a space group I41/a. Raman and infrared transmittance spectra were recorded to investigate vibrational properties of the compound. Room temperature transmission spectrum was measured to reveal band gap energy of the crystal. The derivative spectral and absorption coefficient analyses resulted in direct band gap energy of 3.19 and 3.18 eV, respectively. Urbach energy of the crystal was also determined as 0.17 eV from photon energy dependency of absorption coefficient. The structural and optical parameters ob-tained for NaBi(Mo0.5W0.5O4)2 were compared with the parameters of the NaBi(XO4)2 (X: Mo,W) compounds to understand the effect of the composition on the studied properties. The reported characteristics of NaBi (Mo0.5W0.5O4)2 point out that the compound has significant potential to be used in optoelectronic devices. en_US
dc.description.publishedMonth 3
dc.identifier.citation Işık,M.; Güler, I.; Gasanly, N.M. (2023). "Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications", Materials Science in Semiconductor Processing, Vol.156. en_US
dc.identifier.doi 10.1016/j.mssp.2022.107257
dc.identifier.issn 1369-8001
dc.identifier.issn 1873-4081
dc.identifier.scopus 2-s2.0-85143730359
dc.identifier.uri https://doi.org/10.1016/j.mssp.2022.107257
dc.identifier.uri https://hdl.handle.net/123456789/12141
dc.language.iso en en_US
dc.publisher Elsevier Sci Ltd en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject Nabi(Moo4)(2) en_US
dc.subject Nabi(Wo4)(2) en_US
dc.subject Optical Properties en_US
dc.subject Optoelectronic Applications en_US
dc.title Growth and Characterization of Nabi(Mo0.5w0.5o4)2 Single Crystal: a Promising Material for Optoelectronic Applications en_US
dc.title Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications tr_TR
dc.type Article en_US
dspace.entity.type Publication
gdc.author.id Isik, Mehmet/0000-0003-2119-8266
gdc.author.id Gasanly, Nizami/0000-0002-3199-6686
gdc.author.institutional Güler, İpek
gdc.author.scopusid 23766993100
gdc.author.scopusid 55445682700
gdc.author.scopusid 35580905900
gdc.author.wosid Isik, Mehmet/Kmy-5305-2024
gdc.author.wosid Gasanly, Nizami/Hre-1447-2023
gdc.description.department Çankaya University en_US
gdc.description.departmenttemp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkiye; [Guler, I.] Cankaya Univ, Phys Intercurricular Courses Dept, TR-06530 Ankara, Turkiye; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkiye en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q1
gdc.description.volume 156 en_US
gdc.description.woscitationindex Science Citation Index Expanded
gdc.description.wosquality Q2
gdc.identifier.openalex W4310969184
gdc.identifier.wos WOS:000906648200001
gdc.openalex.fwci 0.49200622
gdc.openalex.normalizedpercentile 0.5
gdc.opencitations.count 4
gdc.plumx.crossrefcites 4
gdc.plumx.mendeley 4
gdc.plumx.newscount 1
gdc.plumx.scopuscites 4
gdc.scopus.citedcount 4
gdc.wos.citedcount 4
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