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Structural and Optical Properties of Ga2se3 Crystals by Spectroscopic Ellipsometry

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Date

2019

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Springer

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Abstract

Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.

Description

Babaeva, Rena/0000-0002-3170-0689; Isik, Mehmet/0000-0003-2119-8266

Keywords

Semiconductors, Optical Properties, Optical Constants, Critical Points

Turkish CoHE Thesis Center URL

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Citation

Guler, I...et al. (2019). "Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry", Journal of Computatonal and Nonlinear Dynamics, Vol. 14, No. 4, pp. 2418-2422.

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Q3

Scopus Q

Q2
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12

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Volume

48

Issue

4

Start Page

2418

End Page

2422
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CrossRef : 2

Scopus : 14

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Mendeley Readers : 13

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1.13852373

Sustainable Development Goals

9

INDUSTRY, INNOVATION AND INFRASTRUCTURE
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