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Conducted Emi Performance Comparison Of Si And Sic Mosfets In A Ccm Boost Pfc Converter For MIL-STD-461F CE102

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dc.contributor.authorKavak, Halil
dc.contributor.authorİskender, İres
dc.contributor.authorJahi, Amir
dc.contributor.authorID133746tr_TR
dc.date.accessioned2024-03-01T07:04:04Z
dc.date.available2024-03-01T07:04:04Z
dc.date.issued2018
dc.departmentÇankaya Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractThis paper presents a comparison of conducted EMI performance of Si and SiC MOSFETs in a CCM PFC boost converter that is designed to meet CE102 of MIL-STD461F. EMI performance comparison is based on MOSFET of the PFC converter. That is, the power switch of the converter is the only parameter that is changed during tests. The boost diode is kept the same during the tests and the type of the boost diode is SiC. The paper shows the CE102 test results of Si and SiC MOSFETs without an EMI filter at the input side of CCM PFC boost converter.en_US
dc.identifier.citationKavak, H.; İskender, İ.; Jahi, A. (2018). "Conducted Emi Performance Comparison Of Si And Sic Mosfets In A Ccm Boost Pfc Converter For MIL-STD-461F CE102", Poznan University Of Technology Academic Journals.en_US
dc.identifier.doi10.21008/j.1897-0737.2018.95.0009
dc.identifier.urihttp://hdl.handle.net/20.500.12416/7407
dc.language.isoenen_US
dc.relation.ispartofPoznan University Of Technology Academic Journalsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCCM Boost Converteren_US
dc.subjectSiliconen_US
dc.subjectSilicon Carbideen_US
dc.subjectConducted EMI, CE102.en_US
dc.titleConducted Emi Performance Comparison Of Si And Sic Mosfets In A Ccm Boost Pfc Converter For MIL-STD-461F CE102tr_TR
dc.titleConducted Emi Performance Comparison of Si and Sic Mosfets in a Ccm Boost Pfc Converter for Mil-Std Ce102en_US
dc.typeArticleen_US
dspace.entity.typePublication

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