Browsing by Author "Gasanly, N. M."

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Citation Count: Işık, M.; Güler, İpek; Gasanly, N. M. (2024). "Characterization of linear and nonlinear optical properties of NaBi(WO4)2 crystal by spectroscopic ellipsometry", OPTICAL MATERIALS, Vol. 148.
Characterization of linear and nonlinear optical properties of NaBi(WO4)2 crystal by spectroscopic ellipsometry
(2024) Işık, M.; Güler, İpek; Gasanly, N. M.; 101531
NaBi(WO4)2 compound has been a material of considerable attention in optoelectronic applications. The present research, in which we examined the linear and nonlinear optical properties of NaBi(WO4)2 crystal using the spectroscopic ellipsometry method, elucidates the optical behavior of the crystal in detail. Our work provides a sensitive approach to determine the spectral characteristic of the crystal. The spectral dependence of various optical parameters such as refractive index, extinction coefficient, dielectric function and absorption coefficient was reported in the range of 1.2-5.0 eV. Optical values such as bandgap energy, critical point energy, single oscillator parameters were obtained as a result of the analyses. In addition to linear optical properties, we also investigated the nonlinear optical behavior of NaBi(WO4)2 and shed new light on the potential applications of the crystal. Absorbance and photoluminescence spectra of the crystal were also reported to characterize optical, electronic and emission behavior of the compound. Our findings may form the basis for a number of technological applications such as optoelectronic devices, frequency conversion, and optical sensors. This research contributes to a better understanding of the optical properties of NaBi(WO4)2 crystal, highlighting the material's role in future optical and electronic technologies.
Citation Count: Guler, I.; Gasanly, N. M., "Compositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystals", Applied Surface Science, 318, pp. 113-115, (2014).
Compositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystals
(Elsevier Science, 2014) Güler, I.; Gasanly, N. M.; Korkmaz, F.
The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported. (C) 2014 Elsevier B.V. All rights reserved.
Citation Count: Işık, M.; Güler, İpek; Gasanly, N. M. (2020). "Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds", Materials Science in Semiconductor Processing, Vol. 108.
Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds
(2020) Işık, M.; Güler, İpek; Gasanly, N. M.; 101531
Ga2Se3 and Ga2S3 compounds take attention due to their potential applications in photovoltaics. Defects and impurities may affect the quality of optoelectronic devices. Therefore, it is worthwhile to determine the parameters (activation energy, order of kinetics, frequency factor) of traps associated with the defects and/or impurities. The aim of the present paper is to investigate the trapping parameters of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal which is one of the member of (Ga2Se3)(x) - (Ga2S3)(1-x) mixed crystals. For this purpose, thermoluminescence (TL) experiments were performed on (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystals in the 10-300 K region. TL spectra were also recorded using various heating rates in between 0.2 and 1.0 K/s and stopping temperatures from 30 to 60 K to get the detailed information about the characteristics of the trapping parameters. TL glow curves exhibited the overlapped peaks. The stopping temperature experimental data indicated that traps present quasi-continuous distribution within the band gap. Initial rise method analyses were applied to get the activation energies of quasi-continuously distributed revealed traps. Thermal activation energies of distributed traps were found as increasing from 108 to 246 meV as stopping temperature was increased from 30 to 60 K. The structural characteristics (lattice constants and atomic compositions of constituent elements) of used compound were also reported in the present study.