Browsing by Author "Gasanly, N. M."

Now showing 1 - 11 of 11

Citation - WoS: 3
Citation - Scopus: 2
Characterization of linear and nonlinear optical properties of NaBi(WO4)2 crystal by spectroscopic ellipsometry
(Elsevier, 2024) Isik, M.; Güler, İpek; Guler, I.; Gasanly, N. M.; 101531; Ortak Dersler Bölümü
NaBi(WO4)2 compound has been a material of considerable attention in optoelectronic applications. The present research, in which we examined the linear and nonlinear optical properties of NaBi(WO4)2 crystal using the spectroscopic ellipsometry method, elucidates the optical behavior of the crystal in detail. Our work provides a sensitive approach to determine the spectral characteristic of the crystal. The spectral dependence of various optical parameters such as refractive index, extinction coefficient, dielectric function and absorption coefficient was reported in the range of 1.2-5.0 eV. Optical values such as bandgap energy, critical point energy, single oscillator parameters were obtained as a result of the analyses. In addition to linear optical properties, we also investigated the nonlinear optical behavior of NaBi(WO4)2 and shed new light on the potential applications of the crystal. Absorbance and photoluminescence spectra of the crystal were also reported to characterize optical, electronic and emission behavior of the compound. Our findings may form the basis for a number of technological applications such as optoelectronic devices, frequency conversion, and optical sensors. This research contributes to a better understanding of the optical properties of NaBi(WO4)2 crystal, highlighting the material's role in future optical and electronic technologies.
Citation - WoS: 5
Citation - Scopus: 6
Compositional Dependence of Raman-Active Mode Frequencies and Line Widths in Tlıns2xse2(1-X) Mixed Crystals
(Elsevier Science Bv, 2014) Guler, I.; Gasanly, N. M.
The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported. (C) 2014 Elsevier B.V. All rights reserved.
Citation - WoS: 4
Citation - Scopus: 4
Growth and characterization of NaBi(Mo0.5W0.5O4)2 single crystal: A promising material for optoelectronic applications
(Elsevier Sci Ltd, 2023) Isik, M.; Guler, I.; Gasanly, N. M.; 101531
The structural and optical characteristics of NaBi(Mo0.5W0.5O4)2 single crystals grown by Czochralski method were investigated. X-ray diffraction (XRD) pattern exhibited four well-defined peaks related to tetragonal crystalline structure with a space group I41/a. Raman and infrared transmittance spectra were recorded to investigate vibrational properties of the compound. Room temperature transmission spectrum was measured to reveal band gap energy of the crystal. The derivative spectral and absorption coefficient analyses resulted in direct band gap energy of 3.19 and 3.18 eV, respectively. Urbach energy of the crystal was also determined as 0.17 eV from photon energy dependency of absorption coefficient. The structural and optical parameters ob-tained for NaBi(Mo0.5W0.5O4)2 were compared with the parameters of the NaBi(XO4)2 (X: Mo,W) compounds to understand the effect of the composition on the studied properties. The reported characteristics of NaBi (Mo0.5W0.5O4)2 point out that the compound has significant potential to be used in optoelectronic devices.
Citation - WoS: 4
Citation - Scopus: 5
Growth and temperature tuned band gap characteristics of NaBi(MoO4)2 single crystal
(Iop Publishing Ltd, 2023) Isik, M.; Guler, I; Gasanly, N. M.; 101531
Structural and optical properties of double sodium-bismuth molybdate NaBi(MoO4)(2) semiconductor compound was investigated by x-ray diffraction, Raman and transmission experiments. From the x-ray diffraction experiments, the crystal that has tetragonal structure was obtained. Vibrational modes of the crystal were found from the Raman experiments. Transmission experiments were performed in the temperature range of 10-300 K. Derivative spectroscopy analysis and absorption spectrum analysis were performed to get information about the change in band gap energy of the crystal with temperature. It was observed that the band gap energies of the crystal at different temperatures obtained from these techniques are well consisted with each other. By the help of absorption spectrum which was obtained from transmission measurements performed at varying temperatures, absolute zero value of the band gap and average phonon energy as 3.03 +/- 0.02 eV and Eph = 24 +/- 0.2 meV, respectively. Moreover, based on absorption spectrum analysis the Urbach energy of the crystal was obtained as 0.10 eV.
Citation - WoS: 1
Citation - Scopus: 1
Optical Characterization of Nabi(Moo4)2 Crystal by Spectroscopic Ellipsometry
(Springer Heidelberg, 2024) Guler, I.; Isik, M.; Gasanly, N. M.
The compound NaBi(MoO4)(2) has garnered significant interest in optoelectronic fields. This study employs spectroscopic ellipsometry to thoroughly examine the linear and nonlinear optical characteristics of NaBi(MoO4)(2) crystals, offering detailed insights into their optical behavior. Our investigation presents a precise method for discerning the crystal's spectral features, revealing the spectral variations of key optical parameters such as refractive index, extinction coefficient, dielectric function, and absorption coefficient within the 1.2-5.0 eV range. Through analysis, we determined optical attributes including bandgap energy, critical point energy, and single oscillator parameters. Additionally, we explored the nonlinear optical properties of NaBi(MoO4)(2), unveiling potential applications such as optoelectronic devices, frequency conversion, and optical sensors. This study enhances comprehension of optical properties of NaBi(MoO4)(2), underscoring its significance in future optical and electronic advancements.
Citation - WoS: 1
Citation - Scopus: 2
Spectroscopic Ellipsometry Study of Linear and Nonlinear Optical Properties of Nabi(Mo0.5w0.5o4)2 Crystal
(Springer, 2024) Isik, M.; Guler, I.; Gasanly, N. M.; Darvishov, N. H.
In this study, linear and nonlinear optical characteristics of NaBi(Mo0.5W0.5O4)(2) crystal, a new material that may have potential for optoelectronic applications, were investigated. NaBi(Mo0.5W0.5O4)(2) single crystals were grown via the Czochralski method. Two sharp and well-defined peaks were observed in the x-ray diffraction pattern. These peaks were associated with tetragonal crystal structure. The data obtained from ellipsometer measurements was matched with a suitable optical model. This allowed for the presentation of the spectral dependence of various optical parameters like refractive index, dielectric constant, optical conductivity, extinction, and absorption coefficients in the range of 1.2-5.0 eV. As a result of studying the spectral dependence of the absorption coefficient under Tauc relationship, bandgap energy of the compound was found to be 3.20 eV. Using the spectral dependence of the dielectric function, the existence of two critical points with energy values of 3.72 and 4.44 eV was revealed. The change of the refractive index in the region under the bandgap was studied using the single oscillator model. Single oscillator and dispersion energies were determined from the analysis results. Nonlinear optical parameters of NaBi(Mo0.5W0.5O4)(2) crystal were also determined. With this study, the optical properties of the NaBi(Mo0.5W0.5O4)(2) are presented in more detail and valuable information is presented for the potential use of the material in optoelectronic devices.
Citation - WoS: 13
Citation - Scopus: 14
Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry
(Springer, 2019) Guler, I.; Güler, İpek; Isik, M.; Gasanly, N. M.; Gasanova, L. G.; Babayeva, R. F.; 101531; Ortak Dersler Bölümü
Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.
Citation - WoS: 7
Citation - Scopus: 7
Study of vibrational modes in (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals by Raman and infrared reflection measurements
(Elsevier, 2019) Isik, M.; Güler, İpek; Guler, I.; Gasanly, N. M.; 101531; Ortak Dersler Bölümü
Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)(x) - (Ga2Se3)(1-x) crystals were established. One-mode behavior was displayed from indicated dependencies.
Citation - WoS: 3
Citation - Scopus: 3
Temperature and Excitation Intensity Tuned Photoluminescence In Ga0.75In0.25Se Crystals
(Elsevier Science Bv, 2013) Isik, M.; Guler, I.; Gasanly, N. M.; 101531
Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved.
Citation - WoS: 4
Citation - Scopus: 4
Temperature-dependent absorption edge and photoconductivity of Tl 2In2S3Se layered single crystals
(Elsevier Science Sa, 2013) Guler, I.; Güler, İpek; Ambrico, M.; Ligonzo, T.; Gasanly, N. M.; 101531; Ortak Dersler Bölümü
Temperature variation of indirect band gap of Tl2In2S3Se layered single crystals were obtained by means of absorption and photoconductivity measurements. The temperature coefficient of -7.1 x 10(-4) eV/K from absorption measurements in the temperature range of 10-300 K in the wavelength range of 520-1100 nm and -5.0 x 10(-4) eV/K from PC measurements in the temperature range of 132-291 K in the wavelength range of 443-620 nm upon supplying voltage V = 80 V were obtained. From the analysis of dark conductivity measurements in the temperature range of 150-300 K, conductivity activation energy was obtained as 0.51 eV above 242 K. The degree of the disorder, the density of localized states near Fermi level, the average hopping distance and average hopping energy of Tl2In2S3Se crystals were found as, 1.9 x 10(5) K, Nf = 4 x 10(20) cm(-3)eV(-1), 29.1 angstrom and 24.2 meV in the temperature range of 171-237 K, respectively. Activation energy of hopping conductivity at T = 171 K was obtained as 41.3 meV and the concentration of trapping states was found as 1.6 x 10(19) cm(-3). (C) 2012 Elsevier B.V. All rights reserved.
Citation - WoS: 2
Citation - Scopus: 2
Thermoluminescence characterization of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal compounds
(Elsevier Sci Ltd, 2020) Isik, M.; Güler, İpek; Guler, I; Gasanly, N. M.; 101531; Ortak Dersler Bölümü
Ga2Se3 and Ga2S3 compounds take attention due to their potential applications in photovoltaics. Defects and impurities may affect the quality of optoelectronic devices. Therefore, it is worthwhile to determine the parameters (activation energy, order of kinetics, frequency factor) of traps associated with the defects and/or impurities. The aim of the present paper is to investigate the trapping parameters of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal which is one of the member of (Ga2Se3)(x) - (Ga2S3)(1-x) mixed crystals. For this purpose, thermoluminescence (TL) experiments were performed on (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystals in the 10-300 K region. TL spectra were also recorded using various heating rates in between 0.2 and 1.0 K/s and stopping temperatures from 30 to 60 K to get the detailed information about the characteristics of the trapping parameters. TL glow curves exhibited the overlapped peaks. The stopping temperature experimental data indicated that traps present quasi-continuous distribution within the band gap. Initial rise method analyses were applied to get the activation energies of quasi-continuously distributed revealed traps. Thermal activation energies of distributed traps were found as increasing from 108 to 246 meV as stopping temperature was increased from 30 to 60 K. The structural characteristics (lattice constants and atomic compositions of constituent elements) of used compound were also reported in the present study.