Ortak Dersler Bölümü

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Citation - WoS: 1
Citation - Scopus: 1
Calculation of the Frequency Shifts and Damping Constant for the Raman Modes (A1g, B1) Near the Tetragonal-Cubic Transition in Srtio3
(Tubitak Scientific & Technological Research Council Turkey, 2017) Yurtseven, Hasan Hamit; Kiraci, Ali; 42475; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
Raman shifts of the soft mode A(1g) and the B-1 mode are calculated at various pressures at room temperature for the cubic-tetragonal transition (P-c = 9.5 GPa) in SrTiO3. This calculation is performed using the observed volume data through the mode Gruneisen parameters of A(1g) and B-1 which vary with pressure, by fitting to the experimental wavenumbers in this crystalline system. Calculated Raman shifts are then used as order parameters to predict the pressure dependence of the damping constant and the inverse relaxation time for the cubic-tetragonal transition in SrTiO3. Our predictions from the pseudospin-phonon coupling and the energy fluctuation models can be compared with the experimental measurements when available in the literature.
Citation - WoS: 5
Citation - Scopus: 6
Characteristic Features of Thermoluminescence in Neodymium-Doped Gallium Sulfide
(Wiley, 2018) Isik, M.; Ahmedova, F.; Guseinov, A.; Gasanly, N.; Guler, I.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
The thermoluminescence (TL) of neodymium-doped gallium sulfide (GaS:Nd) single crystals was measured from 10 K to room temperature with various heating rates between 0.2 and 1.0 K/sec. Two peaks centered at 70.9 K and 116.0 K were observed when using a heating rate of 0.8 K/sec. Initial rise and curve fitting methods were used to obtain information on trap activation energies. Activation energies of 94 and 216 meV were found for two analyzable peaks. The heating rate dependencies of TL intensities revealed that one of the observed peaks showed normal behavior according to the one trap-one recombination model, whereas the other model showed anomalous heating rate behavior. TL experiments were also carried out at different illumination temperatures from 10 to 32 K; maximum peak temperature remained almost the same at various illumination temperatures. This behavior indicated that the revealed trapping centers are single, discrete levels. The TL glow curves of undoped GaS crystals were also investigated and the effect of Nd doping on the TL characteristics of crystals is discussed in the manuscript.
Citation - WoS: 3
Citation - Scopus: 2
Characterization of Linear and Nonlinear Optical Properties of Nabi(Wo4)2 Crystal by Spectroscopic Ellipsometry
(Elsevier, 2024) Guler, I.; Gasanly, N. M.; Isik, M.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
NaBi(WO4)2 compound has been a material of considerable attention in optoelectronic applications. The present research, in which we examined the linear and nonlinear optical properties of NaBi(WO4)2 crystal using the spectroscopic ellipsometry method, elucidates the optical behavior of the crystal in detail. Our work provides a sensitive approach to determine the spectral characteristic of the crystal. The spectral dependence of various optical parameters such as refractive index, extinction coefficient, dielectric function and absorption coefficient was reported in the range of 1.2-5.0 eV. Optical values such as bandgap energy, critical point energy, single oscillator parameters were obtained as a result of the analyses. In addition to linear optical properties, we also investigated the nonlinear optical behavior of NaBi(WO4)2 and shed new light on the potential applications of the crystal. Absorbance and photoluminescence spectra of the crystal were also reported to characterize optical, electronic and emission behavior of the compound. Our findings may form the basis for a number of technological applications such as optoelectronic devices, frequency conversion, and optical sensors. This research contributes to a better understanding of the optical properties of NaBi(WO4)2 crystal, highlighting the material's role in future optical and electronic technologies.
Citation - WoS: 3
Citation - Scopus: 3
Characterization of N Rich-Silicon Nitride Thin Films Deposited by Pecvd
(Electrochemical Soc inc, 2023) Guler, I.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
Silicon nitride thin films are very important for their possible use in semiconductor industry and electronic applications. Changing the deposition parameters, silicon nitrides which have many varying optical properties can be produced. In this work, silicon nitride (SiNx) thin films were deposited on silicon substrates using Plasma enhanced chemical vapor deposition (PECVD) technique. The silane (SiH4) and ammonia (NH3) were used as reactant gases. Using these reactant gases, nitrogen (N) rich SiNx films were obtained. In order to get information about absorption and bond types in the films, films were analyzed by the help of Fourier transform infrared spectroscopy (FTIR) was performed. The refractive index, extinction coefficient and band gap energy of the films were changed from 1.86, 0 and 5.38 eV to 2.05, 0.0048 and 4.26 eV, respectively. Using the refractive index, composition of the films were estimated that is [N]/[Si] ratio of the films varied from 1.38 to 1.62. For possible applications of the SiNx films, learning the origin of the light-emission of the films is very important so the photoluminescence (PL) measurements were also used to see the luminescent of the SiNx films which is related to the electronic transitions between the K-center level and the conduction band tail states.
Citation - WoS: 1
Citation - Scopus: 1
Effect of Estimation Under Nonnormality on the Phase Ii Performance of Linear Profile Monitoring Approaches
(Wiley, 2019) Aytacoglu, Burcu; Bayrak, Ozlem Turker; 56416; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
The number of studies about control charts proposed to monitor profiles, where the quality of a process/product is expressed as function of response and explanatory variable(s), has been increasing in recent years. However, most authors assume that the in-control parameter values are known in phase II analysis and the error terms are normally distributed. These assumptions are rarely satisfied in practice. In this study, the performance of EWMA-R, EWMA-3, and EWMA-3(d(2)) methods for monitoring simple linear profiles is examined via simulation where the in-control parameters are estimated and innovations have a Student's t distribution or gamma distribution. Instead of the average run length (ARL) and the standard deviation of run length, we used average and standard deviation of the ARL as performance measures in order to capture the sampling variation among different practitioners. It is seen that the estimation effect becomes more severe when the number of phase I profiles used in estimation decreases, as expected, and as the distribution deviates from normality to a greater extent. Besides, although the average ARL values get closer to the desired values as the amount of phase I data increases, their standard deviations remain far away from the acceptable level indicating a high practitioner-to-practitioner variability.
Citation - WoS: 7
Citation - Scopus: 7
Exploring the Linear and Nonlinear Optical Behavior of (Tlins2)0.75 Insights From Ellipsometry Measurements
(Elsevier, 2023) Guler, I.; Gasanly, N.; Isik, M.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
The search for layered structured new semiconductor materials with remarkable optical properties has become a driving force, especially for materials science. Tl2In2S3Se [(TlInS2)0.75(TlInSe2)0.25], a fascinating compound, holds great promise for advanced photonic and optoelectronic applications. In the present study, the linear and nonlinear optical properties of Tl2In2S3Se layered single crystals were studied by ellipsometry measurements. The variation of refractive index, extinction coefficient, absorption coefficient and skin depth with energy were investigated. Applying the derivative analysis technique to the absorption spectrum, indirect bandgap was found as 2.19 eV. The refractive index data was analyzed considering single-effective-oscillator model. The lattice dielectric constant, plasma frequency, carrier density to the effective mass ratio and zero-frequency refractive index were found. Moreover, the change in optical conductivity with energy yielded to determine the direct bandgap as 2.40 eV. The optical parameters of nonlinear refractive index, first-and third-order nonlinear susceptibilities were also reported.
Citation - WoS: 5
Citation - Scopus: 5
Growth and Temperature Tuned Band Gap Characteristics of Nabi(Moo4)2 Single Crystal
(Iop Publishing Ltd, 2023) Isik, M.; Guler, I; Gasanly, N. M.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
Structural and optical properties of double sodium-bismuth molybdate NaBi(MoO4)(2) semiconductor compound was investigated by x-ray diffraction, Raman and transmission experiments. From the x-ray diffraction experiments, the crystal that has tetragonal structure was obtained. Vibrational modes of the crystal were found from the Raman experiments. Transmission experiments were performed in the temperature range of 10-300 K. Derivative spectroscopy analysis and absorption spectrum analysis were performed to get information about the change in band gap energy of the crystal with temperature. It was observed that the band gap energies of the crystal at different temperatures obtained from these techniques are well consisted with each other. By the help of absorption spectrum which was obtained from transmission measurements performed at varying temperatures, absolute zero value of the band gap and average phonon energy as 3.03 +/- 0.02 eV and Eph = 24 +/- 0.2 meV, respectively. Moreover, based on absorption spectrum analysis the Urbach energy of the crystal was obtained as 0.10 eV.
Citation - WoS: 4
Citation - Scopus: 4
Impaired Redox Homeostasis in the Heart Left Ventricles of Aged Rats Experiencing Fast-Developing Severe Hypobaric Hypoxia
(Springer, 2019) Agascioglu, Eda; Colak, Ridvan; Demirel, Haydar; Cakatay, Ufuk; 07.01. Lisansüstü Eğitim Enstitüsü; 07. Enstitüler; 01. Çankaya Üniversitesi
Despite its rare occurrence, humans and animals have been prone to getting fast developing severe hypobaric hypoxia. Understanding the redox homeostasis related response of an aging heart to this type of hypoxia are crucially important, since the metabolism of myocardial tissue depends on the redox status of proteins. Rodents can tolerate hypoxic stress better than human subjects. This study was aimed at investigating the effects of fast developing severe hypobaric hypoxia on redox status biomarkers; such as, advanced oxidation protein products (AOPP), lipid hydroperoxides (LHPs), protein carbonyl groups (PCO), protein thiol groups (P-SH), and total thiol groups (T-SH) on the myocardial left ventricles of young and aged Wistar rats. The rats were gradually ascended and exposed to an 8000-meter hypobaric hypoxia. While AOPP levels showed no difference, the TSH and PSH concentrations decreased, and the PCO and LHP increased in both of the hypoxic groups than the controls. The TSH and PSH were lower, and AOPP, PCO and LHP were found to be higher in the elderly hypoxic groups than in the young ones. The significant outcome of the study represents that an 8000-meter hypobaric hypoxia could be considered as a severe hypoxic stress, but not life-treating for the rats and would affect both the young and aged left ventricles similarly in respect to impaired redox status. However, if the percentage increases are taken into consideration, it seems that the higher rate of protein oxidation occurs in young hearts; meanwhile aged hearts are more prone to T-SH oxidation.
Citation - Scopus: 1
Inference of Autoregressive Model With Stochastic Exogenous Variable Under Short-Tailed Symmetric Distributions
(Springer international Publishing Ag, 2018) Bayrak, Ozlem Tuker; Akkaya, Aysen Dener; 56416; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
In classical autoregressive models, it is assumed that the disturbances are normally distributed and the exogenous variable is non-stochastic. However, in practice, short-tailed symmetric disturbances occur frequently and exogenous variable is actually stochastic. In this paper, estimation of the parameters in autoregressive models with stochastic exogenous variable and non-normal disturbances both having short-tailed symmetric distribution is considered. This is the first study in this area as known to the authors. In this situation, maximum likelihood estimation technique is problematic and requires numerical solution which may have convergence problems and can cause bias. Besides, statistical properties of the estimators can not be obtained due to non-explicit functions. It is also known that least squares estimation technique yields neither efficient nor robust estimators. Therefore, modified maximum likelihood estimation technique is utilized in this study. It is shown that the estimators are highly efficient, robust to plausible alternatives having different forms of symmetric short-tailedness in the sample and explicit functions of data overcoming the necessity of numerical solution. A real life application is also given.
Citation - WoS: 9
Optical Analysis of Tlins2xse2(1-X) Mixed Crystals
(Amer inst Physics, 2014) Guler, I.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
The ellipsometry measurements were carried out on TlInS2xSe2(1-x) mixed crystals in the spectral range of 1.5-6.0 eV at room temperature. The refractive index, extinction coefficient, real and imaginary parts of dielectric function were found as a result of ellipsometric measurements. The energies of interband transitions (critical point energies) of the TlInS2xSe2(1-x) mixed crystals were obtained by means of the second derivative of the real and imaginary parts of dielectric function. The variation of the critical point energies with the isomorphic anion substitution that is sulfur for selenium atoms was established. (C) 2014 AIP Publishing LLC.
Citation - WoS: 51
Citation - Scopus: 55
Optical and Structural Characterization of Silicon Nitride Thin Films Deposited by Pecvd
(Elsevier, 2019) Guler, I; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
Plasma enhanced chemical vapor deposition (PECVD) technique was used to deposit silicon nitride (SiNx) thin films. The silane (SiH4) and ammonia (NH3) were used as reactant gases. Both the flow rates of the NH3 and SiH4 gases were changed but total flow rate kept constant to obtain the different ratio nitrogen (N) in the SiNx films. Fourier transform infrared spectroscopy (FTIR) was used to get information about absorption ratios of the films and the bond types in the films. The refractive index of the films was obtained from ellipsometry measurements. From FTIR measurements and ellipsometry measurements, refractive index for amorphous silicon (Si) and refractive index for stoichiometric SiNx were found as 3.27 and 1.91, respectively. The photoluminescence (PL) measurements were used to see the luminescent of the amorphous Si nanoparticles which were occurred spontaneously during deposition process. High resolution transmission electron microscopy (HRTEM) was used to analyze the Si nanoparticle size.
Citation - WoS: 4
Citation - Scopus: 4
Optical Characterization of (Tlins2)0.5 Crystal by Ellipsometry: Linear and Optical Constants for Optoelectronic Devices
(Springer, 2023) Guler, I.; Isik, M.; Gasanly, N.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
TlInSSe [(TlInS2)(0.5)(TlInSe2)(0.5)] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25-6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals.
Citation - WoS: 6
Citation - Scopus: 6
A Phenomenological Study on Ferroelectric Pyridinium Tetrafluoroborate (C5nh6) Bf4
(Elsevier, 2019) Kiraci, A.; 42475; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
The temperature dependence of the specific heat C-V of (C5NH6)BF4 was analyzed according to a power law formula with a critical exponent alpha deduced from the compressible Ising model in the vicinity of the phase transition temperatures of T-C1 = 238 K and T-C2 = 204 K. The extracted values of the critical exponent alpha within the temperature intervals of vertical bar T - T-C1 vertical bar < 6 K and also T - T-C2 < 6 K were consistent with that predicted from the 3d-Ising model (alpha = 0.10) while obtained values of alpha within the temperature interval of T-C2 - T < 6 K were consistent with that predicted from 2-d potts model (alpha = 0.30). In addition, the thermodynamic quantities: the internal energy (U), the entropy (S) and the Helmholtz free energy (F) of this compound were calculated on the basis of the extracted values of the critical exponent a below and above the phase transition temperatures of T-C1 and T-C2.
Pyrrolizine-3 Synthesis and Evaluation of Photophysical Properties
(Taylor & Francis inc, 2024) Tasgin, Dilek Isik; Bayraktar, Irem; 169107; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
We describe a synthetic approach for pyrrolizine-3-one derivatives and their photophysical properties. These compounds are prepared by a series of reactions employing the substituted pyrroles in one-pot, two-step oxidation, and intramolecular cyclization processes. The photophysical properties of the synthesized compounds were studied by using UV-Vis and fluorescence spectroscopy in different solvents. Maximum absorbance peaks were observed around 306-416 nm and maximum fluorescence emission around 603-614 nm and 465-498 nm for pyrrolyl and N-methyl pyrrolyl substituents, respectively. The introduction of a pyrrolyl substituent had a significant impact on the Stokes shifts (192-206 nm) and quantum yield values ranged from 0.002 to 0.046.
Raman Wavenumbers Calculated as a Function of Pressure From the Mode Gruneisen Parameter of Pzt (X = 0.48) Ceramic Close To the Monoclinic-Cubic Transition
(World Scientific Publ Co Pte Ltd, 2019) Kiraci, A.; 42475; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
The isothermal mode Gruneisen parameter gamma(T)(P) of some Raman modes in PbZr1-xTixO3 (PZT, x = 0.48) were calculated as a function of pressure by means of the observed pressure-dependent volume data of PZT (x = 0.48) crystal from the literature at room temperature of 298 K. Those calculated values of gamma(T)(P) were then used to compute the pressure dependence of the Raman modes in PZT (x = 0.48) ceramic studied here. The observed and calculated values of the Raman wavenumbers in PZT were in good agreement, which indicates that the isothermal mode Gruneisen parameter can also be used to predict the pressure-dependent wavenumbers of some other perovskite-type crystals. Additionally, the pressure dependence of the thermodynamic quantities such as isothermal compressibility kappa(T), thermal expansion alpha(P) and the specific heat C-P - C-V of PZT (x = 0.48) ceramic were predicted at constant temperature of 298 K. Here, the experimentally measurable thermodynamic quantities calculated for PZT (x = 0.48) ceramics provide theoretically a significant opportunity for testing.
Citation - WoS: 1
Citation - Scopus: 2
Spectroscopic Ellipsometry Studies of Optical Properties of Tlin(S0.25se0.75)2 Crystal
(Springer Heidelberg, 2023) Guler, I.; Isik, M.; Gasanly, N.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
The optical properties of TlIn(S0.25Se0.75)(2) crystals were studied by ellipsometry measurements. X-ray diffraction pattern presented well-defined peaks associated with monoclinic structure. Energy dependent graphs of various linear optical parameters of the crystal were presented in the 1.25-4.50 eV range. The band gap and Urbach energies of the compound were found as 1.96 and 0.68 eV, respectively, from the analyses of the absorption coefficient. Refractive index spectrum was analyzed considering the single-effective-oscillator model to get oscillator and dispersion energies, zero and high frequency dielectric constants, plasma frequency. Moreover, the nonlinear refractive index, first-order and third-order nonlinear susceptibilities of TlIn(S0.25Se0.75)(2) crystal were revealed in the present paper.
Citation - WoS: 2
Citation - Scopus: 4
Structural and Optical Properties of (Tlins2)0.75 Thin Films Deposited by Thermal Evaporation
(Springer, 2023) Guler, I.; Isik, M.; Gasanly, N.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
Layered semiconductor materials have become a serious research topic in recent years, thanks to their effective optical properties. In this article, the thin-film structure of Tl2In2S3Se [(TlInS2)(0.75)(TlInSe2)(0.25)] material with layered structure was grown by thermal evaporation method. The structural, morphological, and optical properties of the deposited thin films were examined. X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS) and atomic force microscopy (AFM) techniques were used to get information about structural and morphological properties of the thin films. XRD pattern presented well-defined peaks associated with monoclinic crystalline structure. The crystallite size, dislocation density, and lattice strain of the films were also obtained from the analyses of XRD pattern. EDS analysis showed that atomic compositional ratios of the Tl, In, S, and Se elements are consistent with chemical formula of Tl2In2S3Se. The optical characterization of thin film was performed using transmission and Raman spectroscopy techniques. Raman spectrum offered information about the vibrational modes of the thin film. The analyses of the transmission spectrum presented the indirect and direct band gap energies of the Tl2In2S3Se thin film as 2.23 and 2.52 eV, respectively. The further analyses on the absorption coefficient resulted in Urbach energy of 0.58 eV.
Citation - WoS: 13
Citation - Scopus: 14
Structural and Optical Properties of Ga2se3 Crystals by Spectroscopic Ellipsometry
(Springer, 2019) Isik, M.; Gasanly, N. M.; Gasanova, L. G.; Babayeva, R. F.; Guler, I.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.
Citation - WoS: 4
Citation - Scopus: 6
Structural and Optical Properties of Thermally Annealed Thallium Indium Disulfide Thin Films
(Elsevier Science Sa, 2020) Gasanly, N.; Guler, I; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature transmittance spectrum, the band gap energies of the films were identified. The decrease in band gap energies of the films with the annealing temperature up to 300 degrees C was observed due to increase in crystallite size and decrease in lattice strain. From Raman measurements, it was observed that the Raman shifts of the films were well correlated with those of TlInS2 bulk crystal.
Citation - WoS: 8
Citation - Scopus: 8
Study of Vibrational Modes in (Ga2s3)x - (ga2se3)1-X Mixed Crystals by Raman and Infrared Reflection Measurements
(Elsevier, 2019) Guler, I.; Gasanly, N. M.; Isik, M.; 101531; 09.01. Ortak Dersler Bölümü; 09. Rektörlük; 01. Çankaya Üniversitesi
Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)(x) - (Ga2Se3)(1-x) crystals were established. One-mode behavior was displayed from indicated dependencies.

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