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Yavuz, Mustafa

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Name Variants
Yavuz, M.
Job Title
Prof. Dr.
Email Address
myavuz@cankaya.edu.tr
Main Affiliation
Malzeme Bilimi ve Mühendisliği
Status
Former Staff
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ORCID ID
Scopus Author ID
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Google Scholar ID
WoS Researcher ID

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Scholarly Output

4

Articles

3

Views / Downloads

9/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

188

Scopus Citation Count

210

WoS h-index

3

Scopus h-index

3

Patents

0

Projects

0

WoS Citations per Publication

47.00

Scopus Citations per Publication

52.50

Open Access Source

1

Supervised Theses

0

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JournalCount
2011 International Conference on Applied Superconductivity and Electromagnetic Devices, ASEMD 2011 -- 2011 International Conference on Applied Superconductivity and Electromagnetic Devices, ASEMD 2011 -- 14 December 2011 through 16 December 2011 -- Sydney, NSW -- 886481
MATERIALS TRANSACTIONS1
The Journal of Physical Chemistry C1
Transactions of the Canadian Society for Mechanical Engineering1
Current Page: 1 / 1

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Scholarly Output Search Results

Now showing 1 - 4 of 4
  • Article
    Citation - WoS: 23
    Citation - Scopus: 33
    A New Algorithm for U-Shaped Two-Sided Assembly Line Balancing
    (Canadian Science Publishing, 2010) Agpak, Kursad; Yavuz, Mustafa; Yegul, Mustafa Fatih
    This study introduces a new hybrid design for a specific case-of assembly lines, and proposes a multi-pass random assignment algorithm to find the minimum number of stations required. The algorithm also finds the sequence and the schedule of the tasks assigned. The new design is a combination of two-sided lines and U-shaped lines, which benefits from the advantages of both designs at the same time. One side of the line is arranged in U-shape allowing stations with crossovers, and the other side of the line is balanced like a traditional straight flow. Depending on product direction, either Left or Right side of the line can be designed in U-shape. Small and large-sized two-sided assembly line test-bed problems were solved using the algorithm. Optimal results are achieved for all small-sized problems. Due to the novelty Of the design, results of large-sized problems are compared to findings of studies on simple two-sided balancing. Algorithm produced better results in most of the cases.
  • Article
    Citation - WoS: 107
    Citation - Scopus: 111
    Determination of Complete Melting and Surface Premelting Points of Silver Nanoparticles by Molecular Dynamics Simulation
    (Amer Chemical Soc, 2013) Yavuz, M.; Zhou, Y.; Alarifi, H. A.; Atis, M.; Ozdogan, C.; Hu, A.
    A molecular dynamics simulation based on the embedded-atom method was conducted at different sizes of single-crystal Ag nanoparticles (NPs) with diameters of 4 to 20 nm to find complete melting and surface premelting points. Unlike the previous theoretical models, our model can predict both complete melting and surface premelting points for a wider size range of NPs. Programmed heating at an equal rate was applied to all sizes of NPs. Melting kinetics showed three different trends that are, respectively, associated with NPs in the size ranges of 4 to 7 rim, 8 to 10 nm, and 12 to 20 nm. NPs in the first range melted at a single temperature without passing through a surface premelting stage. Melting of the second range started by forming a quasi-liquid layer that expanded to the core, followed by the formation of a liquid layer of 1.8 nm thickness that also subsequently expanded to the core with increasing temperature and completed the melting process. For particles in the third range, the 1.8 nm liquid layer was formed once the thickness of the quasi-liquid layer reached S rim. The liquid layer expanded to the core and formed thicker stable liquid layers as the temperature increased toward the complete melting point. The ratio of the quasi-liquid layer thickness to the NP radius showed a linear relationship with temperature.
  • Article
    Citation - WoS: 58
    Citation - Scopus: 66
    Molecular Dynamics Simulation of Sintering and Surface Premelting of Silver Nanoparticles
    (Japan inst Metals & Materials, 2013) Ozdogan, C.; Hu, A.; Yavuz, M.; Zhou, Y.; Atis, M.; Alarifi, H. A.
    Sintering of Ag nanoparticles (NPs) is increasingly being used as a driving mechanism for joining in the microelectronics industry. We therefore performed molecular dynamics simulations based on the embedded atom method (EAM) to study pressureless sintering kinetics of two Ag NPs in the size range of (4 to 20 nm), and sintering of three and four Ag NPs of 4 nm diameter. We found that the sintering process passed through three main stages. The first was the neck formation followed by a rapid increase of the neck radius at 50K for 20 nm particles and at 10 K for smaller NPs. The second was characterized by a gradual linear increase of the neck radius to particle radius ratio as the temperature of the sintered structure was increased to the surface premelting point. Different than previous sintering studies, a twin boundary was formed during the second stage that relaxed the sintered structure and decreased the average potential energy (PE). The third stage of sintering was a rapid shrinkage during surface premelting of the sintered structure. Based on pore geometry, densification occurred during the first stage for three 4 nm particles and during the second stage for four 4 nm particles. Sintering rates obtained by our simulation were higher than those obtained by theoretical models generally used for predicting sintering rates of microparticles.
  • Conference Object
    Development of Continuous Wrapping Tantalum Barriers for Internal-Tin Nb 3sn Multi-Filamentary Wires
    (2011) Chen, W.M.; Yavuz, M.; Fu, X.K.; Kambe, S.; McIntyre, P.; Jin, J.X.
    A process, continuous wrapping tantalum barrier, has been developed and investigated in order to reduce the manufacturing cost. By avoiding inserting expensive tantalum tube, a long sheet barrier was directly used to wrap a prior restack. In this work, a tantalum barrier with 20 % overlap was wrapped onto sub-elements. Then 18-filament Nb 3Sn plus 1 copper core restack billet was successfully drawn down and extruded into round wire as thin as a diameter of 0.84 mm. The longitudinal and cross-sectional images revealed most of barriers were continuous and intact. However, further experiments are needed to optimize the process in order to keep the all barriers continuous and intact after manufacturing. © 2011 IEEE.